2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC
- Fully operational to ±650V
- Power supply operating range from 14 to 18 V
- Gate drive currents of +1 A / –2 A
- Matched propagation delay for both channels
- High dV/dt immunity
- Low power consumption
SKU: Not Found
Brand: Generic
- 100% Secure Checkout
- 7-Day Easy Returns
- Authentic & Quality Checked
- 24/7 Priority Support
Product Description
The 2ED020I06-FI is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver, the 2ED020I06-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 650V.
Features:
- Floating high side driver
- Undervoltage lockout for both channels
- 3.3 V and 5 V TTL compatible inputs
- CMOS Schmitt-triggered inputs with pull-down
- Non-inverting inputs
- Interlocking inputs
- Dedicated shutdown input with pull-up
- RoHS compliant
Package Includes:
1 x 2ED020I06-FI – 650 V Dual IGBT Half-Bridge Gate Driver IC
Technical Specifications
| Height (mm) | 3 |
|---|---|
| Input Voltage (V) | 14 to 18 |
| Length (mm) | 25 |
| Manufacturer | Generic |
| Shipping Dimensions | 1 × 1 × 1 cm |
| Shipping Weight | 0.001 kg |
| Weight (g) | 3 |
| Width (mm) | 13 |